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| DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Mechanical Data * * * * * * * * SOT-563 NEW PRODUCT Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) D2 G1 S1 ESD Protected up to 2kV TOP VIEW S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 20 305 800 Units V V mA Thermal Characteristics @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 250 500 -65 to +150 Units mW C/W C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 60 1.0 0.5 Typ 1.6 284 Max 250 500 100 2.5 2.0 3.0 1.4 50 25 5.0 Unit V nA nA V ms V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 50V, VGS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601VK Document number: DS30655 Rev. 4 - 2 1 of 4 www.diodes.com October 2007 (c) Diodes Incorporated DMN601VK VGS = 10V 8V 6V 5V 4V 3V 8V 6V 5V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 NEW PRODUCT 4V 3V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VDS = 10V ID = 1mA 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2 1.5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () Pulsed 1 0.5 0 -50 -25 75 100 125 0 25 50 TCH, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 150 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage DMN601VK Document number: DS30655 Rev. 4 - 2 2 of 4 www.diodes.com October 2007 (c) Diodes Incorporated DMN601VK IDR, REVERSE DRAIN CURRENT (A) VGS = 0V Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () TA = 150C TA = 125C TA = 85C TA = 25C NEW PRODUCT TA = 0C TA = -25C TA = -55C 0 TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) VGS = 10V VGS = 10V Pulsed TA = 25C TA = 150C TA = -55C TA= 25C Pulsed TA = 85C VGS = 0V 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Ordering Information Part Number DMN601VK-7 Notes: (Note 6) Case SOT-563 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K YM S2 G2 D1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year Code Month Code 2005 S Jan 1 Feb 2 2006 T Mar 3 2007 U Apr 4 May 5 2008 V Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D October 2007 (c) Diodes Incorporated DMN601VK Document number: DS30655 Rev. 4 - 2 3 of 4 www.diodes.com DMN601VK Package Outline Dimensions A NEW PRODUCT BC D G K H M SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN601VK Document number: DS30655 Rev. 4 - 2 4 of 4 www.diodes.com October 2007 (c) Diodes Incorporated |
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